1·The relationship between metallization rate and reducibility is analyzed based onthe definitions of them.
根据金属化率和还原度的定义，分析了二者之间的关系。
2·Quick surface metallization of titania powder was carried out by electroless chemical deposition of nickel.
采用镍的无电子化学沉积方法研究了纳米二氧化钛粉末表面的快速金属化。
3·One aspect of the present invention is a method of forming a semiconductor device having copper metallization.
本发明的一个方面是形成具有铜金属化的半导体器件的方法。
4·According with an embodiment of the invention, the heating layer USES metal or metallization flexible material, and can control the heating surface on required correct place.
按照本发明的实施例，发热层采用金属及金属化的柔性材料，因此可将发热面控制在所需的正确部位。
5·The present invention relates to methods and structures for the metallization of semiconductor devices.
本发明涉及半导体器件的金属化的方法和结构。