1·Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。
2·This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
3·From the time-dependence of reflectivity at different temperature the solid phase epitaxial (SPE) growth rate was calculated.
从反射率随时间的变化曲线，计算出不同退火温度下的固相外延速率。
4·It is indicated that the step potential on the surface of the epitaxial grounding grid meets the specialty standard as long as the depth of burying of the grid is reasonable.
计算和实践表明，只要接地极埋设深度适宜，外延接地网表面的跨步电势仍然能够满足专业技术规范的安全要求。
5·PNP epitaxial silicon transistor. Low frequency power amplifier.
PNP外延硅晶体管。低频功率放大器。